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Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °C

Author
GATES, S. M1 ; GREENLIEF, C. M; BEACH, D. B; HOLBERT, P. A
[1] T. J. Watson res. cent., IBM res. div., Yorktown Heights NY 10598, United States
Source

The Journal of chemical physics. 1990, Vol 92, Num 5, pp 3144-3153 ; ref : 34 ref

CODEN
JCPSA6
ISSN
0021-9606
Scientific domain
Atomic molecular physics; Condensed state physics; Polymers, paint and wood industries
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Adsorbant minéral Adsorbat organique Adsorption gaz solide Chimisorption Etude théorique Face cristalline Interface gaz solide Isotherme adsorption Semiconducteur Silane Silicium Spectrométrie SIMS Température
Keyword (en)
Inorganic adsorbent Organic adsorbate Gas solid adsorption Chemisorption Theoretical study Crystal face Gas solid interface Adsorption isotherm Semiconductor materials Silane Silicon Secondary ion mass spectrometry Temperature
Keyword (es)
Adsorbente inorgánico Adsorbato orgánico Adsorción gas sólido Adsorción química Estudio teórico Cara cristal Interfase gas sólido Isotermo adsorción Semiconductor(material) Silano Silicio Espectrometría SIMS Temperatura
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01I Surface physical chemistry / 001C01I04 Solid-gas interface

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6884912

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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