Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE busing an AIN buffer layer
- Autor
- AMANO, H1 ; ASAHI, T; AKASAKI, I
[1] Nagoya univ., school eng., Chukusa-ku Nagoya 464-01, Japan - Fuente
Japanese journal of applied physics. 1990, Vol 29, Num 2, pp L205-L206 ; 1 ; ref : 6 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Campo Científico
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Editor
- Japanese journal of applied physics, Tokyo
- País de la publicación
- Japan
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Application Composé minéral Couche tampon Couche épitaxique Emission stimulée Etude expérimentale Gallium Nitrure Méthode phase vapeur Préparation Rayonnement UV Température ambiante Support saphir
- Palabra clave (in)
- Application Inorganic compound Buffer layer Epitaxial film Stimulated emission Experimental study Gallium Nitrides Growth from vapor Preparation Ultraviolet radiation Room temperature
- Palabra clave (es)
- Aplicación Compuesto inorgánico Capa tampón Capa epitáxica Emisión estimulada Estudio experimental Galio Método fase vapor Preparación Rayos ultravioleta Temperatura ambiente
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H45 Stimulated emission
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 6908431
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.29.L205 
https://dx.doi.org/10.1143/JJAP.29.L205
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