Admittance spectroscopy measurement of band offset in GaAs-GaAIAs multiquantum well
- Author
- LETARTRE, X; STIEVENARD, D; LANNOO, M; LIPPENS, D
ISEN, lab. physique solides, Lille 59046, France - Source
Journal of applied physics. 1990, Vol 68, Num 1, pp 116-119 ; ref : 10 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Admittance Aluminium Gallium Arséniure Mixte Champ électrique Composé minéral Courbure bande Energie activation Etude expérimentale Gallium Arséniure Niveau Fermi Puits quantique multiple Semiconducteur Structure électronique Température Discontinuité bande Emission thermoionique
- Keyword (en)
- Admittance Aluminium Gallium Arsenides Mixed Electric field Inorganic compound Band bending Activation energy Experimental study Gallium Arsenides Band offset Fermi level Multiple quantum well Semiconductor materials Electronic structure Temperature
- Keyword (es)
- Admitancia Aluminio Campo eléctrico Compuesto inorgánico Curvatura banda Energía activación Estudio experimental Galio Nivel Fermi Pozo cuántico múltiple Semiconductor(material) Estructura electrónica Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6934143
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.347102 
https://dx.doi.org/10.1063/1.347102
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