Aharonov-Bohm and quantum Hall effects in singly connected quantum dots
- Author
- SIVAN, U1 ; IMRY, Y; HARTZSTEIN, C
[1] Tel-Aviv univ., Raymond Beverly Sackler fac. exact sci., school physics astronomy, Tel-Aviv 69978, Israel - Source
Physical review. B, Condensed matter. 1989, Vol 39, Num 2, pp 1242-1250 ; ref : 35 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Approximation liaison forte Effet Aharonov Bohm Effet Hall quantique Etude théorique Hamiltonien Magnétoconductivité Modèle 2 dimensions Niveau Landau Phénomène transport Propriété électrique Semiconducteur Structure électronique
- Keyword (en)
- Tight binding approximation Aharonov Bohm effect Quantum Hall effect Theoretical study Hamiltonian Magnetoconductivity Two dimensional model Landau level Transport process Electrical properties Semiconductor materials Electronic structure
- Keyword (es)
- Aproximación ligadura fuerte Efecto Aharonov Bohm Efecto Hall cuántico Estudio teórico Hamiltoniano Magnetoconductividad Modelo 2 dimensiones Nivel Landau Fenómeno transporte Propiedad eléctrica Semiconductor(material) Estructura electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6961012
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.39.1242 
https://dx.doi.org/10.1103/PhysRevB.39.1242
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