AlGaAs burying growth for InGaAsP/GaAs buried heterostructure lasers by liquid-phase epitaxy
- Author
- ISHIKAWA, J1 ; TAYAMA, S; ITO, T; TAKAHASHI, N. S; KURITA, S
[1] Keio univ., fac. sci. technology, dep. electrical eng., Yokohama 223, Japan - Source
Journal of crystal growth. 1989, Vol 94, Num 4, pp 911-918 ; ref : 16 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Hétérojonction Laser semiconducteur Laser enterré
- Keyword (en)
- Heterojunction Buried laser Semiconductor laser
- Keyword (es)
- Heterounión Laser semiconductor
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6961592
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(89)90124-3 
https://dx.doi.org/10.1016/0022-0248(89)90124-3
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