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The application of RHEED intensity effects to interrupted growth and interface formation during MBE growth of GaAs/(Al,Ga)As structures

Author
JOYCE, B. A1 ; ZHANG, J; NEAVE, J. H; DOBSON, P. J
[1] Philips Research Laboratories, Redhill Surrey RH1 5HA, United Kingdom
Source

Applied physics. A, Solids and surfaces. 1988, Vol 45, Num 3, pp 255-260 ; ref : 20 ref

CODEN
APSFDB
ISSN
0721-7250
Scientific domain
Electronics; Condensed state physics
Publisher
Springer, Berlin / Springer, Heidelberg / Springer, New York, NY
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Composition chimique Composé minéral Couche mince Croissance cristalline Diffraction électron réflexion Epitaxie Etude expérimentale Face cristalline Gallium Arséniure Hétérojonction Interface solide solide Reconstruction surface Solution solide
Keyword (en)
Aluminium Gallium Arsenides Mixed Chemical composition Inorganic compound Thin film Crystal growth Reflection high energy electron diffraction Epitaxy Experimental study Crystal face Gallium Arsenides Heterojunction Solid solid interface Surface reconstruction Solid solution
Keyword (es)
Aluminio Composición química Compuesto inorgánico Capa fina Crecimiento cristalino Difracción electrón reflexión Epitaxia Estudio experimental Cara cristal Galio Heterounión Interfase sólido sólido Reconstrucción superficie Solución sólida
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
6982820

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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