Transport measurements of Sb contacts to InP(110)
- Author
- ZAHN, D. R. T1 ; MCLEAN, A. B; WILLIAMS, R. H; ESSER, N; RICHTER, W
[1] Univ. coll. Cardiff, physics dep., Cardiff Wales, United Kingdom - Source
Applied physics letters. 1988, Vol 52, Num 9, pp 739-741 ; ref : 11 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Antimoine Barrière Schottky Contact métal semiconducteur Contact ohmique Contact électrique Dopage Indium Phosphure Propriété électrique
- Keyword (en)
- Antimony Schottky barrier Semiconductor metal contact Ohmic contact Electric contact Doping Indium Phosphides Electrical properties
- Keyword (es)
- Antimonio Barrera Schottky Contacto metal semiconductor Contacto óhmico Contacto eléctrico Doping Indio Propiedad eléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7006474
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.99341 
https://dx.doi.org/10.1063/1.99341
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