Unusual room-temperature intermixing and oxidation in copper deposited on a fluorinated amorphous silicon system
- Author
- CYTERMANN, C1 ; BRENER, R; SACHER, E; PRATT, B; WEIL, R
[1] Technion-Israel inst. technology, physics dep., Haifa 32000, Israel - Source
Applied physics letters. 1988, Vol 52, Num 3, pp 191-193 ; ref : 19 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composition chimique Couche mince Cuivre Diffusion chimique Emission électronique Auger Fabrication microélectronique Hétérodiffusion Métallisation Réaction chimique Silicium Solution solide
- Keyword (en)
- Chemical composition Thin film Copper Chemical diffusion Auger emission Microelectronic fabrication Impurity diffusion Metallizing Chemical reaction Silicon Solid solution
- Keyword (es)
- Composición química Capa fina Cobre Difusión química Emisión electrónica Auger Fabricación microeléctrica Heterodifusión Metalización Reacción química Silicio Solución sólida
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7011747
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.99516 
https://dx.doi.org/10.1063/1.99516
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