Transient structural relaxation of amorphous silicon
- Author
- SINKE, W1 ; WARABISAKO, T; MIYAO, M; TOKUYAMA, T; ROORDA, S; SARIS, F. W
[1] Hitachi ltd., Tokyo 185, Japan - Source
Journal of non-crystalline solids. 1988, Vol 99, Num 2-3, pp 308-323 ; ref : 18 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Concentration porteur charge Couche mince Diffusion Raman Dépôt sous vide Energie activation Etat amorphe Etude expérimentale Haute température Implantation ion Impulsion laser Impureté Phosphore Recuit thermique Recuit Relaxation structurale Semiconducteur Silicium Température Amorphisation Distorsion angle liaison Préparation
- Keyword (en)
- Charge carrier concentration Thin film Raman scattering Vacuum deposition Activation energy Amorphous state Experimental study High temperature Ion implantation Laser pulse Impurity Phosphorus Thermal annealing Annealing Structure relaxation Semiconductor materials Silicon Temperature
- Keyword (es)
- Concentración portador carga Capa fina Difusión Ramán Depósito bajo vacío Energía activación Estado amorfo Estudio experimental Alta temperatura Implantación ión Impulsión láser Impureza Fósforo Recocido térmico Recocido Relajación estructural Semiconductor(material) Silicio Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60E Thermal properties of condensed matter / 001B60E40 Thermal properties of crystalline solids / 001B60E40D Thermal expansion; thermomechanical effects and density
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7024376
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-3093(88)90439-5 
https://dx.doi.org/10.1016/0022-3093(88)90439-5
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