Tunneling microscopy of 2H-MoS2: a compound semiconductor surface
- Author
- WEIMER, M1 ; KRAMAR, J; BAI, C; BALDESCHWIELER, J. D
[1] California inst. technology, Pasadena CA 91125, United States - Source
Physical review. B, Condensed matter. 1988, Vol 37, Num 8, pp 4292-4295 ; ref : 13 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Etude expérimentale Microscopie tunnel balayage Molybdène Sulfure Métal transition Composé Polytypisme Semiconducteur Structure surface
- Keyword (en)
- Inorganic compound Experimental study Scanning tunneling microscopy Molybdenum Sulfides Transition metal Compounds Polytypism Semiconductor materials Surface structure
- Keyword (es)
- Compuesto inorgánico Estudio experimental Microscopía túnel barrido Molibdeno Metal transición Politipismo Semiconductor(material) Estructura superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7061110
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.37.4292 
https://dx.doi.org/10.1103/PhysRevB.37.4292
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