Titanium silicides formed by rapid thermal vacuum processing
- Author
- DEXIN, C. X1 ; HARRISON, H. B; REEVES, G. K
[1] Royal Melbourne inst. technology, microelectronics technology cent., Melbourne 3000, Australia - Source
Journal of applied physics. 1988, Vol 63, Num 6, pp 2171-2173 ; ref : 6 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Conductivité électrique Contrôle fabrication Fabrication microélectronique Monocristal Polycristal Processus rapide Réaction chimique Rétrodiffusion Rutherford Silicium Titane Siliciure Titane Traitement thermique
- Keyword (en)
- Electrical conductivity Processing control Microelectronic fabrication Single crystal Polycrystal Rapid process Chemical reaction Rutherford backscattering Silicon Titanium Silicides Titanium Heat treatment
- Keyword (es)
- Conductividad eléctrica Control fabricación Fabricación microeléctrica Monocristal Policristal Proceso rápido Reacción química Retrodifusión Rutherford Silicio Titanio Titanio Tratamiento térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7092518
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.341080 
https://dx.doi.org/10.1063/1.341080
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