Ultimate scaling limits for high-frequency GaAs MESFET's
- Author
- GOLIO, J. M1
[1] Motorola government electrics group, Chandler AZ 85248-2899, United States - Source
I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 839-848 ; ref : 18 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré monolithique Conception circuit Gallium Arséniure Loi échelle Transistor effet champ barrière Schottky Transistor effet champ Transistor haute fréquence
- Keyword (en)
- Monolithic integrated circuit Circuit design Gallium Arsenides Scaling law Metal semiconductor field effect transistor Field effect transistor High frequency transistor
- Keyword (es)
- Circuito integrado monolítico Concepción circuito Galio Ley escala Transistor efecto campo barrera Schottky Transistor efecto campo Transistor alta frecuencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7136480
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.3334 
https://dx.doi.org/10.1109/16.3334
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