Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
- Author
- ENQUIST, P1 ; HUTCHBY, J. A; DE LYON, T. J
[1] Research Triangle inst., Research Triangle Park NC 27709, United States - Source
Journal of applied physics. 1988, Vol 63, Num 9, pp 4485-4493 ; ref : 15 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Codopage Coefficient diffusion Composé minéral Concentration impureté Couche épitaxique Etude expérimentale Gallium Arséniure Hétérodiffusion Hétérojonction Impureté Méthode phase vapeur Profil diffusion Recuit thermique Semiconducteur Silicium Spectrométrie SIMS Zinc Composé organométallique
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Codoping Diffusion coefficient Inorganic compound Impurity density Epitaxial film Experimental study Gallium Arsenides Impurity diffusion Heterojunction Impurity Growth from vapor Diffusion profile Thermal annealing Semiconductor materials Silicon Secondary ion mass spectrometry Zinc
- Keyword (es)
- Aluminio Codrogado Coeficiente difusión Compuesto inorgánico Concentración impureza Capa epitáxica Estudio experimental Galio Heterodifusión Heterounión Impureza Método fase vapor Perfil difusión Recocido térmico Semiconductor(material) Silicio Espectrometría SIMS Zinc
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30J Diffusion of impurities
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7145904
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.340143 
https://dx.doi.org/10.1063/1.340143
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