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Three-dimensional analysis of subthreshold swing and transconductance for fully recessed oxide (trench) isolated 1/4-μm-width MOSFET's

Author
SHIGYO, N1 ; FUKUDA, S; WADA, T; HIEDA, K; HAMAMOTO, T; WATANABE, H; SUNOUCHI, K; TANGO, H
[1] Toshiba corp., Kawasaki-shi 210, Japan
Source

I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 945-951 ; ref : 17 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Analyse performance Capacité différentielle Etude comparative Grille transistor Modèle 3 dimensions Procédé fabrication Seuil tension Transconductance Transistor MOS Transistor effet champ
Keyword (en)
Performance analysis Differential capacity Comparative study Transistor gate Three dimensional model Manufacturing process Voltage threshold Transconductance MOS transistor Field effect transistor
Keyword (es)
Análisis eficacia Capacidad diferencial Estudio comparativo Rejilla transistor Modelo 3 dimensiones Propcedimiento fabricación Umbral tensión Transconductancia Transistor MOS Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7148500

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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