Carrier injection mechanism in an a-SiC p-i-n junction thin-film LED
- Author
- KRUANGAM, D1 ; DEGUCHI, M; TOYAMA, T; OKAMOTO, H; HAMAKAWA, Y
[1] Osaka univ., Osaka 560, Japan - Source
I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 957-965 ; ref : 14 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diode couche intrinsèque Diode électroluminescente Dispositif amorphe Dispositif couche mince Effet tunnel Injection porteur charge Silicium Carbure
- Keyword (en)
- P i n diode Light emitting diode Amorphous device Thin film device Tunnel effect Charge carrier injection Silicon Carbides
- Keyword (es)
- Diodo capa intrínseca Diodo electroluminescente Dispositivo amorfo Dispositivo capa delgada Efecto túnel Inyección portador carga Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7148501
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.3351 
https://dx.doi.org/10.1109/16.3351
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