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Energy relaxation of 2D electrons at an AlGaAs/GaAs heterojunction at helium temperatures

Author
KRESCHUK, A. M1 ; MARTISOV, M. YU; POLYANSKAYA, T. A; SAVEL'EV, I. G; SAIDASHEV, I. I; SHIK, A. YA; SHMARTSEV, YU. V
[1] Acad. sci. USSR, A. F. Ioffe physicotech. inst., Leningrad 194021, Ussr
Source

Solid state communications. 1988, Vol 65, Num 10, pp 1189-1192 ; ref : 8 ref

CODEN
SSCOA4
ISSN
0038-1098
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Composé minéral Concentration porteur charge Effet Hall Effet Shubnikov de Haas Etude expérimentale Gallium Arséniure Hétérojonction Interaction électron phonon Magnétoconductivité Mobilité porteur charge Métal transition Composé Phonon acoustique Population niveau énergie Porteur charge Relaxation énergie Température Très basse température
Keyword (en)
Aluminium Gallium Arsenides Mixed Inorganic compound Charge carrier concentration Hall effect Shubnikov de Haas effect Experimental study Gallium Arsenides Heterojunction Electron phonon interaction Magnetoconductivity Charge carrier mobility Transition metal Compounds Acoustic phonon Energy level population Charge carrier Energy relaxation Temperature Very low temperature
Keyword (es)
Aluminio Compuesto inorgánico Concentración portador carga Efecto Hall Efecto Shubnikov de Haas Estudio experimental Galio Heterounión Interacción electrón fonón Magnetoconductividad Movilidad portador carga Metal transición Fonón acústico Populación nivel energía Portador carga Relajación energía Temperatura Temperatura muy baja
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7155979

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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