Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic
- Author
- POTTER, R. C1 ; LAKHANI, A. A; BEYEA, D; HIER, H; HEMPFLING, E; FATHIMULLA, A
[1] Allied-Signal Aerospace co., Columbia MD 21045, United States - Source
Applied physics letters. 1988, Vol 52, Num 25, pp 2163-2164 ; ref : 8 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Indium Arséniure Mixte Analyse fonctionnement Barrière potentiel Caractéristique courant tension Circuit logique Conductivité différentielle négative Contact électrique Couche mince Couche multiple Diode tunnel Dépôt Effet tunnel Fabrication microélectronique Gallium Indium Arséniure Mixte Indium Phosphure Puits Structure stratifiée Substrat
- Keyword (en)
- Aluminium Indium Arsenides Mixed Operation study Potential barrier Voltage current curve Logic circuit Negative differential conductivity Electric contact Thin film Multiple layer Tunnel diode Deposition Tunnel effect Microelectronic fabrication Gallium Indium Arsenides Mixed Indium Phosphides Well Laminated structure Substrate
- Keyword (es)
- Aluminio Análisis funcionamiento Barrera potencial Característica corriente tensión Circuito lógico Conductividad diferencial negativa Contacto eléctrico Capa fina Capa múltiple Diodo túnel Depósito Efecto túnel Fabricación microeléctrica Galio Indio Pozo Estructura estratificada Substrato
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F05 Other multijunction devices. Power transistors. Thyristors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7212145
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.99565 
https://dx.doi.org/10.1063/1.99565
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