Transition-metal impurities in semiconductors and heterojunction band lineups
- Author
- DELERUE, C1 ; LANNOO, M; LANGER, J. M
[1] Inst. supérieur électronique Nord, Lille 59046, France - Source
Physical review letters. 1988, Vol 61, Num 2, pp 199-202 ; ref : 24 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Approximation liaison forte Etude théorique Fonction Green Hétérojonction Lacune Liaison disponible Métal transition Niveau impureté Semiconducteur Discontinuité bande
- Keyword (en)
- Tight binding approximation Theoretical study Green function Band offset Heterojunction Vacancy Dangling bond Transition metal Impurity level Semiconductor materials
- Keyword (es)
- Aproximación ligadura fuerte Estudio teórico Función Green Heterounión Cavidad Enlace disponible Metal transición Nivel impureza Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7227412
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevLett.61.199 
https://dx.doi.org/10.1103/PhysRevLett.61.199
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