Kinetics of solid phase crystallization in amorphous silicon
- Author
- OLSON, G. L1 ; ROTH, J. A
[1] Hughes Research Laboratories, Malibu CA 90265, United States - Source
Materials science reports. 1988, Vol 3, Num 1, pp 1-77 ; ref : 138 ref
- CODEN
- MSREEL
- ISSN
- 0920-2307
- Scientific domain
- Crystallography; Mechanics acoustics; Metallurgy, welding; Condensed state physics
- Publisher
- North-Holland, Amsterdam
- Publication country
- Netherlands
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- Arsenic Cinétique Couche mince Cristallisation Croissance cristalline Dépôt sous vide Epitaxie Etat amorphe Etude expérimentale Germination cristalline Implantation ion Impureté Indium Microscopie électronique transmission Non métal Or Semiconducteur Silicium Diagramme phase Support Si Support SiO2 Température
- Keyword (en)
- Arsenic Kinetics Thin film Crystallization Crystal growth Vacuum deposition Epitaxy Amorphous state Experimental study Crystal nucleation Ion implantation Impurity Indium Transmission electron microscopy Non metal Gold Semiconductor materials Silicon
- Keyword (es)
- Arsénico Cinética Capa fina Cristalización Crecimiento cristalino Depósito bajo vacío Epitaxia Estado amorfo Estudio experimental Germinación cristalina Implantación ión Impureza Indio Microscopía electrónica transmisión No metal Oro Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7234217
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0920-2307(88)80005-7 
https://dx.doi.org/10.1016/S0920-2307(88)80005-7
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