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Unusual electron beam effects in the GaAs (100)/CP2 system

Author
MOKLER, S. M1 ; WATSON, P. R
[1] Oregon state univ., dep. chemistry, Corvallis OR 97331-4003, United States
Source

Solid state communications. 1989, Vol 70, Num 4, pp 415-417 ; ref : 10 ref

CODEN
SSCOA4
ISSN
0038-1098
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Adsorbant minéral Adsorbat minéral Adsorption gaz solide Chlore Désorption impact électron Etude expérimentale Face cristalline Gallium Arséniure Interface gaz solide Méthode physique Semiconducteur Spectrométrie Auger
Keyword (en)
Inorganic adsorbent Inorganic adsorbate Gas solid adsorption Chlorine Electron impact desorption Experimental study Crystal face Gallium Arsenides Gas solid interface Physical method Semiconductor materials Auger electron spectrometry
Keyword (es)
Adsorbente inorgánico Adsorbato inorgánico Adsorción gas sólido Cloro Desorción impacto electrón Estudio experimental Cara cristal Galio Interfase gas sólido Método físico Semiconductor(material) Espectrometría Auger
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01I Surface physical chemistry / 001C01I04 Solid-gas interface

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7241756

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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