Chemical vapor deposition of molybdenum silicide
- Author
- WEST, G. A1 ; BEESON, K. W
[1] Allied-Signal inc., Morristown NJ 07960, United States - Source
Journal of the Electrochemical Society. 1988, Vol 135, Num 7, pp 1752-1757 ; ref : 22 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse pression Composition chimique Composé minéral Conductivité électrique Couche épaisse Croissance cristalline Diffraction RX Dépôt chimique phase vapeur Enthalpie libre Etat amorphe Etude expérimentale Microscopie électronique balayage Molybdène Siliciure Métal transition Composé Polycristal Recuit Rétrodiffusion Rutherford Température Support Al2O3 Support SiO2
- Keyword (en)
- Low pressure Chemical composition Inorganic compound Electrical conductivity Thick film Crystal growth X ray diffraction Chemical vapor deposition Free enthalpy Amorphous state Experimental study Scanning electron microscopy Molybdenum Silicides Transition metal Compounds Polycrystal Annealing Rutherford backscattering Temperature
- Keyword (es)
- Baja presión Composición química Compuesto inorgánico Conductividad eléctrica Capa espesa Crecimiento cristalino Difracción RX Depósito químico fase vapor Entalpía libre Estado amorfo Estudio experimental Microscopía electrónica barrido Molibdeno Metal transición Policristal Recocido Retrodifusión Rutherford Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10B Growth from vapor
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7255996
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2096113 
https://dx.doi.org/10.1149/1.2096113
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1149\/1.2096113\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Journal of the Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:19:\"J. Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:3:\"135\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1752\";s:8:\"\u0000*\u0000epage\";s:4:\"1757\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-4651\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WEST\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"BEESON, K. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JESOAN\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:8:\"\u0000*\u0000place\";s:14:\"Pennington, NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1149\/1.2096113\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Journal of the Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:19:\"J. Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:3:\"135\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1752\";s:8:\"\u0000*\u0000epage\";s:4:\"1757\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-4651\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WEST\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"BEESON, K. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JESOAN\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:8:\"\u0000*\u0000place\";s:14:\"Pennington, NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:17:\"10.1149\/1.2096113\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1149\/1.2096113\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Journal of the Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:19:\"J. Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:3:\"135\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1752\";s:8:\"\u0000*\u0000epage\";s:4:\"1757\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-4651\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WEST\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"BEESON, K. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JESOAN\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:8:\"\u0000*\u0000place\";s:14:\"Pennington, NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1149\/1.2096113\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:9:\"\u0000*\u0000jtitle\";s:38:\"Journal of the Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:19:\"J. Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:3:\"135\";s:8:\"\u0000*\u0000issue\";s:1:\"7\";s:8:\"\u0000*\u0000spage\";s:4:\"1752\";s:8:\"\u0000*\u0000epage\";s:4:\"1757\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-4651\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WEST\";s:10:\"\u0000*\u0000aufirst\";s:4:\"G. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"BEESON, K. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JESOAN\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:48:\"Chemical vapor deposition of molybdenum silicide\";s:8:\"\u0000*\u0000place\";s:14:\"Pennington, NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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