Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors
- Author
- KUZUHARA, M1 ; KIM, K; HESS, K
[1] Univ. Illinois, coordinated sci. lab., Urbana IL 61801, United States - Source
I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 1, pp 118-123 ; 1 ; ref : 26 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Electron chaud Gallium Indium Arséniure Mixte Méthode Monte Carlo Transistor hétérojonction Transistor
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Hot electron Gallium Indium Arsenides Mixed Monte Carlo method Heterojunction transistor Transistor
- Keyword (es)
- Aluminio Electrón caliente Galio Método Monte Carlo Transistor heterounión Transistor
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7277191
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.21190 
https://dx.doi.org/10.1109/16.21190
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