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Understanding focus effects in submicrometer optical lithography

Author
MACK, C. A1
[1] National security agency, Fort Meade MD 20755-6000, United States
Source

Optical engineering (Bellingham. Print). 1988, Vol 27, Num 12, pp 1093-1100 ; ref : 10 ref

CODEN
OPEGAR
ISSN
0091-3286
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Society of Photo-Optical Instrumentation Engineers, Bellingham, WA
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Lithographie Photorésist Profondeur champ Qualité image Simulation Lithographie optique
Keyword (en)
Lithography Photoresist Depth of field Image quality Simulation Optical lithographic
Keyword (es)
Litografía Fotorresistente Profundidad campo Calidad imagen Simulación
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7294776

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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