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Type conversion near the p-Si substrate surface by growing GaAs on Si substrates

Author
NISHIOKA, T1 ; ITOH, Y; YAMAMOTO, A; YAMAGICHI, M
[1] NTT Electrical Communications Laboratories, Tokai Ibaraki-ken 319-11, Japan
Source

Journal of applied physics. 1988, Vol 64, Num 3, pp 1266-1270 ; ref : 18 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Dépôt Etat électronique interface Gallium Arséniure Hétérojonction Jonction p n
Keyword (en)
Deposition Interface electron state Gallium Arsenides Heterojunction P n junction
Keyword (es)
Depósito Estado electrónico interfase Galio Heterounión Unión p n
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7296079

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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