Trench depth measurement method for wafer patterning
- Author
- TAKADA, K1 ; NODA, J
[1] Nippon Telegraph & Telephone corp., Tokai Ibaraki-ken 319-11, Japan - Source
Precision engineering. 1989, Vol 11, Num 3, pp 145-150 ; ref : 5 ref
- CODEN
- PREGDL
- ISSN
- 0141-6359
- Scientific domain
- Mechanical engineering; Metallurgy, welding
- Publisher
- Elsevier Science, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit VLSI Epaisseur Fabrication microélectronique Interférence optique Interféromètre Michelson Lumière blanche Méthode domaine fréquence Méthode domaine temps Observation spectroscopique Pastille (électronique) Silicium Système mesure
- Keyword (en)
- VLSI circuit Thickness Microelectronic fabrication Optical interference Michelson interferometer White light Frequency domain method Time domain method Spectroscopical observation Wafer Silicon Measuring system
- Keyword (es)
- Circuito VLSI Espesor Fabricación microeléctrica Interferencia óptica Interferómetro Michelson Luz blanca Método dominio frecuencia Método dominio tiempo Observación espectroscópica Pastilla(electrónica) Silicio Sistema medida
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7341095
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0141-6359(89)90069-X 
https://dx.doi.org/10.1016/0141-6359(89)90069-X
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