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Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

Author
BENJELLOUN, N1 ; TAPIERO, M; ZIELINGER, J. P; LAUNAY, J. C; MARSAUD, F
[1] Univ. Louis Pasteur, école européenne hautes études industries chimiques, Strasbourg 67084, France
Source

Journal of applied physics. 1988, Vol 64, Num 8, pp 4013-4023 ; ref : 32 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Bismuth Germanium Oxyde Mixte Composé minéral Etude expérimentale Fer Impureté Niveau défaut Niveau profond Photoconductivité Piégeage porteur charge Recombinaison porteur charge Température Vanadium Spectrométrie transitoire courant photoinduit
Keyword (en)
Bismuth Germanium Oxides Mixed Photoinduced current transient spectrometry Inorganic compound Experimental study Iron Impurity Defect level Deep level Photoconductivity Charge carrier trapping Charge carrier recombination Temperature Vanadium
Keyword (es)
Bismuto Compuesto inorgánico Estudio experimental Hierro Impureza Nivel profundo Fotoconductividad Captura portador carga Recombinación portador carga Temperatura Vanadio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7344473

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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