Tungsten/titanium nitride low-resistance interconnections durable for high-temperature processing
- Author
- NAKASAKI, Y1 ; SUGURO, K; SHIMA, S; KASHIWAGI, M
[1] Toshiba corp., Saiwai-ku Kawasaki 210, Japan - Source
Journal of applied physics. 1988, Vol 64, Num 6, pp 3263-3268 ; ref : 16 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Contact ohmique Contact électrique Fabrication microélectronique Résistance contact Résistance faible Silicium Titane Nitrure Tungstène
- Keyword (en)
- Ohmic contact Electric contact Microelectronic fabrication Contact resistance Low value resistor Silicon Titanium Nitrides Tungsten
- Keyword (es)
- Contacto óhmico Contacto eléctrico Fabricación microeléctrica Resistencia contacto Resistor débil Silicio Titanio Wolframio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7348108
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.342493 
https://dx.doi.org/10.1063/1.342493
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