Admittance analysis of DX centers in Te-doped LPE n-type AlGaAs material
- Autor
- GE WEIKUN1 ; WU RONGHAN
[1] Acad. sinica, inst. semiconductors, Beijing, China - Fuente
Chinese physics. = Chung Kuo wu li. 1987, Vol 7, Num 1, pp 229-239 ; ref : 19 ref
- CODEN
- CHPHD2
- ISSN
- 0273-429X
- Campo Científico
- Optics; Atomic molecular physics; Condensed state physics; Physics
- Editor
- American Institute of Physics, New York, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Admittance Aluminium Gallium Arséniure Mixte Centre donneur Composé minéral Etude expérimentale Impureté Méthode mesure Niveau profond Semiconducteur Tellure Centre DX Niveau défaut
- Palabra clave (in)
- Admittance Aluminium Gallium Arsenides Mixed Defect level Donor center Inorganic compound Experimental study Impurity Measurement method Deep level Semiconductor materials Tellurium
- Palabra clave (es)
- Admitancia Aluminio Centro dador Compuesto mineral Estudio experimental Impureza Método medida Nivel profundo Semiconductor(material) Teluro
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A60 Positron states
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 7429038
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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