Thermal annealing of semi-insulating GaAs under controlled arsenic pressure
- Author
- OBOKATA, T1 ; SATO, T; FUJII, T
[1] Optoelectronics joint-res. lab., Nakahara-ku Kawasaki 211, Japan - Source
Applied physics letters. 1987, Vol 50, Num 17, pp 1146-1148 ; ref : 11 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Conductivité électrique Encapsulation Etude expérimentale Gallium Arséniure Méthode Czochralski Piégeage porteur charge Recuit Semiconducteur Centre EL2
- Keyword (en)
- Inorganic compound Electrical conductivity Encapsulation Experimental study Gallium Arsenides Czochralski method Charge carrier trapping Annealing Semiconductor materials
- Keyword (es)
- Compuesto mineral Conductividad eléctrica Encapsulación Estudio experimental Galio Método Czochralski Captura portador carga Recocido Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7431008
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.97944 
https://dx.doi.org/10.1063/1.97944
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