Type conversion in close contact rapid thermal annealing of Si-implanted InP
- Author
- FARLEY, C. W1 ; STREETMAN, B. G
[1] Univ. Texas, microelectronics res. cent., Austin TX 78712, United States - Source
Journal of the Electrochemical Society. 1987, Vol 134, Num 2, pp 498-499 ; ref : 9 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Conductivité type n Couche inversion Dégagement gazeux Encapsulation Fabrication microélectronique Implantation ion Indium Phosphure Phosphore Recuit Semiconducteur Silicium Solubilité Suppression Traitement thermique Traitement rapide
- Keyword (en)
- N type conductivity Inversion layer Gas release Encapsulation Microelectronic fabrication Ion implantation Indium Phosphides Phosphorus Annealing Semiconductor materials Silicon Solubility Suppression Heat treatment
- Keyword (es)
- Conductividad tipo n Capa inversión Desprendimiento gaseoso Encapsulación Fabricación microeléctrica Implantación ión Indio Fósforo Recocido Semiconductor(material) Silicio Solubilidad Supresión Tratamiento térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7446838
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2100488 
https://dx.doi.org/10.1149/1.2100488
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