The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology
- Author
- ROSS, J. F1 ; ROBINS, I; WEBB, B. C
[1] THORN EMI Central Research Laboratories, Hayes Middx. UB3 1HH, United Kingdom - Source
Sensors and actuators. 1987, Vol 11, Num 1, pp 73-90 ; ref : 25 ref
- Publisher
- Elsevier Sequoia, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Ammoniac Analyse chimique Appareillage Condition opératoire Détecteur Electrode spécifique Electronique Grille métallique Méthode couplée Méthode électrochimique Platine Structure MOS Transistor effet champ
- Keyword (en)
- Ammonia Chemical analysis Instrumentation Operating conditions Detector Ion selective electrode Electronics Metal grid Coupled method Electrochemical method Platinum MOS structure Field effect transistor
- Keyword (es)
- Amoníaco Análisis químico Instrumentación Condición operatoria Detector Electrodo específico Electrónica Grilla metálica Método acoplado Método electroquímico Platino Estructura MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C04 Analytical chemistry / 001C04E Electrochemical methods
- Discipline
- Analytical chemistry
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7470415
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0250-6874(87)85006-0 
https://dx.doi.org/10.1016/0250-6874(87)85006-0
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0250-6874(87)85006-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Sensors and actuators\";s:9:\"\u0000*\u0000stitle\";s:15:\"Sens. actuators\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"73\";s:8:\"\u0000*\u0000epage\";s:2:\"90\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0250-6874\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ROSS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"ROBINS, I\";i:1;s:10:\"WEBB, B. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SEACDX\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Sequoia\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0250-6874(87)85006-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Sensors and actuators\";s:9:\"\u0000*\u0000stitle\";s:15:\"Sens. actuators\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"73\";s:8:\"\u0000*\u0000epage\";s:2:\"90\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0250-6874\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ROSS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"ROBINS, I\";i:1;s:10:\"WEBB, B. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SEACDX\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Sequoia\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0250-6874(87)85006-0\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0250-6874(87)85006-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Sensors and actuators\";s:9:\"\u0000*\u0000stitle\";s:15:\"Sens. actuators\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"73\";s:8:\"\u0000*\u0000epage\";s:2:\"90\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0250-6874\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ROSS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"ROBINS, I\";i:1;s:10:\"WEBB, B. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SEACDX\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Sequoia\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0250-6874(87)85006-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Sensors and actuators\";s:9:\"\u0000*\u0000stitle\";s:15:\"Sens. actuators\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"73\";s:8:\"\u0000*\u0000epage\";s:2:\"90\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0250-6874\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ROSS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"ROBINS, I\";i:1;s:10:\"WEBB, B. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SEACDX\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:96:\"The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Sequoia\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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