Activation et protection de semiconducteurs en milieu aqueux
- Other title
- Activation and protection of semiconductors in aqueous medium (en)
- Author
- KOSSANYI, Jean
FRT, Paris, France (Funder/Sponsor)
CNRS. Photochimie solaire, Thiais, France (Editor) - Source
Activation et protection de semiconducteurs en milieu aqueux. 1986, 20 p., ref : 2 p
- Report number
- FRT - 81 F 1030
- Document type
- Report
- Language
- French
- Keyword (fr)
- Adsorption Application Cellule photoélectrochimique Cobalt Colorant anthraquinonique Composé minéral Dopage Etude expérimentale Gallium Arséniure Manganèse Nickel Photoconductivité Photosensibilisation Protection corrosion Semiconducteur Silicium Solution aqueuse Thiophène polymère Zinc Oxyde
- Keyword (en)
- Adsorption Application Photoelectrochemical cell Cobalt Anthraquinone dye Inorganic compound Doping Experimental study Gallium Arsenides Manganese Nickel Photoconductivity Photosensitization Corrosion protection Semiconductor materials Silicon Aqueous solution Thiophene polymer Zinc Oxides
- Keyword (es)
- Adsorción Aplicación Célula fotoelectroquímica Cobalto Colorante antraquinónico Compuesto mineral Doping Estudio experimental Galio Manganeso Niquel Fotoconductividad Fotosensibilización Protección corrosión Semiconductor(material) Silicio Solución acuosa Tiofeno polímero Zinc
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B40 Photoconduction and photovoltaic effects; photodielectric effects
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7476631
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:6:\"report\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:0:\"\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"KOSSANYI\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Jean\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:6:\"report\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000title\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"20\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:6:\"report\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:0:\"\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"KOSSANYI\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Jean\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:6:\"report\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000title\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"20\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:6:\"report\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:0:\"\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"KOSSANYI\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Jean\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:6:\"report\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000title\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"20\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:6:\"report\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:0:\"\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"KOSSANYI\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Jean\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:6:\"report\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000title\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"20\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:6:\"report\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:0:\"\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"KOSSANYI\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Jean\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:6:\"report\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000title\";s:60:\"Activation et protection de semiconducteurs en milieu aqueux\";s:8:\"\u0000*\u0000place\";s:0:\"\";s:6:\"\u0000*\u0000pub\";s:0:\"\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"20\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
