Caractérisation physique des structures de diodes laser à puits quantique
- Other title
- Physical characterization of the structure of quantum well laser diodes (en)
- Author
- DE CREMOUX, Baudoin; HERSEE, Stephen; KRAKOWSKI, Michel; NAGLE, Julien; RAZEGHI, Manijeh; WEISBUCH, Claude
FRT, Paris, France (Funder/Sponsor)
Thomson-CSF, Orsay, France - Source
Caractérisation physique des structures de diodes laser à puits quantique. 1985, 81 p., ref : 2 p
- Report number
- FRT - 84 B 0283
- Document type
- Report
- Language
- French
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Gallium Indium Phosphoarséniure Mixte Laser injection Laser semiconducteur Piégeage porteur charge Puits quantique multiple Puits quantique Recombinaison porteur charge
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Gallium Indium Arsenides phosphides Mixed Injection laser Semiconductor laser Charge carrier trapping Multiple quantum well Quantum well Charge carrier recombination
- Keyword (es)
- Aluminio Galio Láser inyección Láser semiconductor Captura portador carga Pozo cuántico múltiple Pozo cuántico Recombinación portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7497339
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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