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Time-resolved spectroscopy of Zn- and Cd-doped GaN

Author
BERGMAN, P1 ; GAO YING; MONEMAR, B; HOLTZ, P. O
[1] Linköping univ., dep. physics measurement technology, Linköping 581 83, Sweden
Source

Journal of applied physics. 1987, Vol 61, Num 9, pp 4589-4592 ; ref : 23 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Cadmium Composé minéral Couche mince Epitaxie Etude expérimentale Gallium Nitrure Impureté substitutionnelle Impureté Photoluminescence Recombinaison porteur charge Semiconducteur Zinc
Keyword (en)
Cadmium Inorganic compound Thin film Epitaxy Experimental study Gallium Nitrides Substitutional impurities Impurity Photoluminescence Charge carrier recombination Semiconductor materials Zinc
Keyword (es)
Cadmio Compuesto mineral Capa fina Epitaxia Estudio experimental Galio Impureza substitucional Impureza Fotoluminiscencia Recombinación portador carga Semiconductor(material) Zinc
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7501268

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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