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The suppression of residual defects of silicon with group III, IV and V elements

Author
HASENACK, C. M1 ; DE SOUZA, J. P; BAUMVOL, I. J. R
[1] UFRGS, inst. fisica, Porto Alegre RS 90049, Brazil
Source

Semiconductor science and technology. 1987, Vol 2, Num 8, pp 477-484 ; ref : 28 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Défaut cristallin Elément groupe IVB Elément groupe VB Etude expérimentale Implantation ion Métal groupe IIIB Non métal Recuit Rétrodiffusion Rutherford Silicium
Keyword (en)
Crystal defect Group IVB element Group VB element Experimental study Ion implantation Group IIIB metal Non metal Annealing Rutherford backscattering Silicon
Keyword (es)
Defecto cristalino Elemento grupo IVB Elemento grupo VB Estudio experimental Implantación ión Metal grupo IIIB No metal Recocido Retrodifusión Rutherford Silicio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7590976

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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