Tunnelling via DX centres in n-AlGaAs/GaAs modulation doped field effect transistors
- Author
- MURRAY, C. M
- Source
GEC journal of research. 1987, Vol 5, Num 2, pp 99-105 ; ref : 14 ref
- CODEN
- GJRSDZ
- ISSN
- 0264-9187
- Scientific domain
- Electronics
- Publisher
- General Electric Company, Chelmsford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Effet tunnel Gallium Arséniure Transistor effet champ Transistor mobilité électron élevée
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Tunnel effect Gallium Arsenides Field effect transistor High electron mobility transistor
- Keyword (es)
- Aluminio Efecto túnel Galio Transistor efecto campo Transistor movibilad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7602067
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:9:\"\u0000*\u0000jtitle\";s:23:\"GEC journal of research\";s:9:\"\u0000*\u0000stitle\";s:10:\"GEC j. res\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:1:\"5\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"99\";s:8:\"\u0000*\u0000epage\";s:3:\"105\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0264-9187\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MURRAY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"GJRSDZ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:8:\"\u0000*\u0000place\";s:10:\"Chelmsford\";s:6:\"\u0000*\u0000pub\";s:24:\"General Electric Company\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:9:\"\u0000*\u0000jtitle\";s:23:\"GEC journal of research\";s:9:\"\u0000*\u0000stitle\";s:10:\"GEC j. res\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:1:\"5\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"99\";s:8:\"\u0000*\u0000epage\";s:3:\"105\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0264-9187\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MURRAY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"GJRSDZ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:8:\"\u0000*\u0000place\";s:10:\"Chelmsford\";s:6:\"\u0000*\u0000pub\";s:24:\"General Electric Company\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:9:\"\u0000*\u0000jtitle\";s:23:\"GEC journal of research\";s:9:\"\u0000*\u0000stitle\";s:10:\"GEC j. res\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:1:\"5\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"99\";s:8:\"\u0000*\u0000epage\";s:3:\"105\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0264-9187\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MURRAY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"GJRSDZ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:8:\"\u0000*\u0000place\";s:10:\"Chelmsford\";s:6:\"\u0000*\u0000pub\";s:24:\"General Electric Company\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:9:\"\u0000*\u0000jtitle\";s:23:\"GEC journal of research\";s:9:\"\u0000*\u0000stitle\";s:10:\"GEC j. res\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:1:\"5\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"99\";s:8:\"\u0000*\u0000epage\";s:3:\"105\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0264-9187\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MURRAY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"GJRSDZ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:8:\"\u0000*\u0000place\";s:10:\"Chelmsford\";s:6:\"\u0000*\u0000pub\";s:24:\"General Electric Company\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:9:\"\u0000*\u0000jtitle\";s:23:\"GEC journal of research\";s:9:\"\u0000*\u0000stitle\";s:10:\"GEC j. res\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:1:\"5\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:2:\"99\";s:8:\"\u0000*\u0000epage\";s:3:\"105\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0264-9187\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MURRAY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"GJRSDZ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:84:\"Tunnelling via DX centres in n-AlGaAs\/GaAs modulation doped field effect transistors\";s:8:\"\u0000*\u0000place\";s:10:\"Chelmsford\";s:6:\"\u0000*\u0000pub\";s:24:\"General Electric Company\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
