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Theoretical approach to the optimal preheating temperature for cw CO2 laser annealing of semiconductors

Author
YOUFAN LIU1 ; ENGE WANG
[1] Liaoning TV univ., dep. physics, Liaoning, China
Source

Journal of applied physics. 1987, Vol 62, Num 3, pp 1006-1009 ; ref : 9 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Absorption IR Coefficient absorption Coefficient réflexion Etude théorique Faisceau laser Haute température Méthode mesure Recuit Réflexion IR Semiconducteur Silicium Température Théorie classique Théorie semiclassique Très haute température
Keyword (en)
Infrared absorption Absorptance Reflectance Theoretical study Laser beam High temperature Measurement method Annealing Infrared reflection Semiconductor materials Silicon Temperature Classical theory Semiclassical theory Very high temperature
Keyword (es)
Absorción IR Coeficiente absorsión Coeficiente reflexión Estudio teórico Haz láser Alta temperatura Método medida Recocido Reflexión infrarrojos Semiconductor(material) Silicio Temperatura Teoría clásica Teoría semiclásica Temperatura muy alta
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20C Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7605399

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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