Surfaces of silicon
- Author
- HANEMAN, D1
[1] Univ. New South Wales, dep. condensed matter physics, Kensington NSW 2033, Australia - Source
Reports on Progress in Physics (Print). 1987, Vol 50, Num 8, pp 1045-1086 ; ref : 4 p
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adsorption Article synthèse Diffraction électron lent Emission photoélectronique Emission électronique Auger Etat électronique surface Etude expérimentale Face cristalline Gradin Microscopie tunnel balayage Semiconducteur Silicium Spectre perte énergie électron Structure surface
- Keyword (en)
- Adsorption Review LEED diffraction Photoelectron emission Auger emission Surface electron state Experimental study Crystal face Step Scanning tunneling microscopy Semiconductor materials Silicon Electron energy loss spectrum Surface structure
- Keyword (es)
- Adsorción Artículo síntesis Difracción electrón lenta Emisión fotoelectrónica Emisión electrónica Auger Estado electrónico superficie Estudio experimental Cara cristal Peldaño Microscopía túnel barrido Semiconductor(material) Silicio Espectro pérdida energía electrón Estructura superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7640551
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0034-4885/50/8/003 
https://dx.doi.org/10.1088/0034-4885/50/8/003
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