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Transient photoconductivity measurements in semi-insulating GaAs II: A digital approach

Author
ABELE, J. C1 ; KREMER, R. E; BLAKEMORE, J. S
[1] Oregon graduate cent., Beaverton OR 97006, United States
Source

Journal of applied physics. 1987, Vol 62, Num 6, pp 2432-2438 ; ref : 16 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Chrome Composé minéral Etude expérimentale Gallium Arséniure Impureté Niveau défaut Niveau profond Photoconductivité transitoire Semiconducteur Traitement numérique Traitement signal Semiisolant Spectrométrie transitoire photoinduite
Keyword (en)
Chromium Inorganic compound Experimental study Gallium Arsenides Photoinduced transient spectrometry Impurity Defect level Deep level Transient photoconductivity Semiconductor materials Digital processing Signal processing
Keyword (es)
Cromo Compuesto mineral Estudio experimental Galio Impureza Nivel profundo Fotoconductividad transitoria Semiconductor(material) Tratamiento numérico Procesamiento señal
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7643464

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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