High-temperature treatment of porous silicon
- Author
- LABUNOV, V. A1 ; BONDARENKO, V. P; BORISENKO, V. E; DOROFEEV, A. M
[1] Minsk radioeng. inst., Minsk 220 069, Ussr - Source
Physica status solidi. A. Applied research. 1987, Vol 102, Num 1, pp 193-198 ; ref : 11 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cristallisation Diamètre Diffraction RX Dilatation Distorsion réseau Elasticité Etude expérimentale Flexion Matériau poreux Microscopie électronique balayage Microstructure Pore Semiconducteur Silicium Traitement thermique
- Keyword (en)
- Crystallization Diameter X ray diffraction Dilatation Lattice distortion Elasticity Experimental study Bending Porous material Scanning electron microscopy Microstructure Pore Semiconductor materials Silicon Heat treatment
- Keyword (es)
- Cristalización Diámetro Difracción RX Dilatación Distorsión red Elasticidad Estudio experimental Flexión Material poroso Microscopía electrónica barrido Microestructura Poro Semiconductor(material) Silicio Tratamiento térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D90 Other topics in equations of state, phase equilibria, and phase transitions
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7645035
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211020119 
https://dx.doi.org/10.1002/pssa.2211020119
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