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Thermal nitridation of SiOxHy films

Author
HABRAKEN, F. H. P. M1 ; GEERLINGS, E. L. J; TIJHAAR, R. H. G; SLOMP, A; VAN DER WEG, W. F
[1] Utrecht state univ., dep. atomic interface physics, Utrecht TA 3508, Netherlands
Source

Journal of applied physics. 1987, Vol 62, Num 6, pp 2573-2575 ; ref : 8 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Composé minéral Couche mince Etude expérimentale Nitruration Rétrodiffusion Rutherford Silicium Hydroxyde Spectrométrie Auger Stoechiométrie Température Traitement surface
Keyword (en)
Inorganic compound Thin film Experimental study Nitriding Rutherford backscattering Silicon Hydroxides Auger electron spectrometry Stoichiometry Temperature Surface treatment
Keyword (es)
Compuesto mineral Capa fina Estudio experimental Nitruración Retrodifusión Rutherford Silicio Espectrometría Auger Estoiquiometría Temperatura Tratamiento superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7664461

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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