Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation
- Author
- MORITA, T1 ; KOBAYASHI, J; TAKAMORI, T; TAKAMORI, A; MIYAUCHI, E; HASHIMOTO, H
[1] Optoelectronics joint res. lab., Nakahara-ku Kawasaki 211, Japan - Source
Japanese journal of applied physics. 1987, Vol 26, Num 8, pp 1324-1327 ; 1 ; ref : 12 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Béryllium Coefficient diffusion Composé minéral Concentration impureté Couche enterrée Etude expérimentale Faisceau ionique Faisceau moléculaire Gallium Arséniure Haute température Hétérodiffusion Implantation ion Profil diffusion Recuit Semiconducteur Silicium
- Keyword (en)
- Beryllium Diffusion coefficient Inorganic compound Impurity density Buried layer Experimental study Ion beam Molecular beam Gallium Arsenides High temperature Impurity diffusion Ion implantation Diffusion profile Annealing Semiconductor materials Silicon
- Keyword (es)
- Berilio Coeficiente difusión Compuesto mineral Concentración impureza Capa enterrada Estudio experimental Haz iónico Haz molecular Galio Alta temperatura Heterodifusión Implantación ión Perfil difusión Recocido Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30J Diffusion of impurities
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7677931
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1143/JJAP.26.1324 
https://dx.doi.org/10.1143/JJAP.26.1324
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.26.1324\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"26\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1324\";s:8:\"\u0000*\u0000epage\";s:4:\"1327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MORITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:12:\"KOBAYASHI, J\";i:1;s:11:\"TAKAMORI, T\";i:2;s:11:\"TAKAMORI, A\";i:3;s:11:\"MIYAUCHI, E\";i:4;s:12:\"HASHIMOTO, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.26.1324\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"26\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1324\";s:8:\"\u0000*\u0000epage\";s:4:\"1327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MORITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:12:\"KOBAYASHI, J\";i:1;s:11:\"TAKAMORI, T\";i:2;s:11:\"TAKAMORI, A\";i:3;s:11:\"MIYAUCHI, E\";i:4;s:12:\"HASHIMOTO, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.26.1324\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.26.1324\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"26\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1324\";s:8:\"\u0000*\u0000epage\";s:4:\"1327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MORITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:12:\"KOBAYASHI, J\";i:1;s:11:\"TAKAMORI, T\";i:2;s:11:\"TAKAMORI, A\";i:3;s:11:\"MIYAUCHI, E\";i:4;s:12:\"HASHIMOTO, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.26.1324\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"26\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1324\";s:8:\"\u0000*\u0000epage\";s:4:\"1327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MORITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:12:\"KOBAYASHI, J\";i:1;s:11:\"TAKAMORI, T\";i:2;s:11:\"TAKAMORI, A\";i:3;s:11:\"MIYAUCHI, E\";i:4;s:12:\"HASHIMOTO, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.26.1324\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1987\";s:9:\"\u0000*\u0000volume\";s:2:\"26\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1324\";s:8:\"\u0000*\u0000epage\";s:4:\"1327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MORITA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:12:\"KOBAYASHI, J\";i:1;s:11:\"TAKAMORI, T\";i:2;s:11:\"TAKAMORI, A\";i:3;s:11:\"MIYAUCHI, E\";i:4;s:12:\"HASHIMOTO, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
