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Theory of the steady-state hole drift velocity in InGaAs

Author
BRENNAN, K1
[1] Georgia inst. technology, school electrical eng. microelectronics res. cent., Atlanta GA 30332-0250, United States
Source

Applied physics letters. 1987, Vol 51, Num 13, pp 995-997 ; ref : 23 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Champ électrique Composé minéral Diffusion porteur charge Etude théorique Gallium Indium Arséniure Mixte Mobilité porteur charge Méthode Monte Carlo Phonon Régime permanent Régime saturation Semiconducteur Structure électronique Trou Vitesse dérive
Keyword (en)
Electric field Inorganic compound Charge carrier scattering Theoretical study Gallium Indium Arsenides Mixed Charge carrier mobility Monte Carlo method Phonon Steady state Saturation state Semiconductor materials Electronic structure Hole Drift velocity
Keyword (es)
Campo eléctrico Compuesto mineral Difusión portador carga Estudio teórico Galio Movilidad portador carga Método Monte Carlo Fonón Régimen permanente Régimen saturación Semiconductor(material) Estructura electrónica Hoyo Velocidad deriva
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20H High-field and nonlinear effects

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7677942

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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