Threshold voltage and field effects in semiconductor double-injection devices
- Author
- ASHLEY, K. L1 ; STAWSKI, R
[1] Southern methodist univ., dep. electrical eng., Dallas TX 75275, United States - Source
Journal of applied physics. 1987, Vol 62, Num 4, pp 1484-1491 ; ref : 12 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D17 Other techniques and industries
- Discipline
- Generalities in applied sciences
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7744944
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.339628 
https://dx.doi.org/10.1063/1.339628
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