Trap generation and occupation in stressed gate oxides under spatially variable oxide electric field
- Author
- AVNI, E1 ; SHAPPIR, J
[1] Hebrew univ. Jerusalem, school applied sci. technology, Jerusalem, Israel - Source
Applied physics letters. 1987, Vol 51, Num 22, pp 1857-1859 ; ref : 12 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Champ variable Champ électrique Injection électron Modèle électrique Piégeage porteur charge Structure MOS Structure électronique Variation spatiale
- Keyword (en)
- Varying field Electric field Electron injection Electrical model Charge carrier trapping MOS structure Electronic structure Spatial variation
- Keyword (es)
- Campo variable Campo eléctrico Inyección electrón Modelo eléctrico Captura portador carga Estructura MOS Estructura electrónica Variación espacial
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7748955
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.98493 
https://dx.doi.org/10.1063/1.98493
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