Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperature
- Author
- LULLI, G1 ; MERLI, P. G; ANTISARI, M. V
[1] CNR, ist. chimica technologia materiali componenti elettronica, Bologna 40126, Italy - Source
Physical review. B, Condensed matter. 1987, Vol 36, Num 15, pp 8038-8042 ; ref : 24 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche enterrée Couche mince Dose rayonnement Epitaxie Etat amorphe Etude expérimentale Faisceau électronique Irradiation Microscopie électronique transmission Non métal Recristallisation Silicium
- Keyword (en)
- Buried layer Thin film Radiation dose Epitaxy Amorphous state Experimental study Electron beam Irradiation Transmission electron microscopy Non metal Recrystallization Silicon
- Keyword (es)
- Capa enterrada Capa fina Dosis irradiación Epitaxia Estado amorfo Estudio experimental Haz electrónico Irradiación Microscopía electrónica transmisión No metal Recristalización Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7770270
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.36.8038 
https://dx.doi.org/10.1103/PhysRevB.36.8038
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