Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications
- Author
- ERDTMANN, M1 ; JIANG, J1 ; MATLIS, A1 ; TAHRAOUI, A1 ; JELEN, C1 ; RAZEGHI, M1 ; BROWN, G. J2
[1] Center for Quantum Devices, Northwestern University, Evanston, IL 60208, United States
[2] Aright Laboratories, Materials Directorate, WL/MLPO, Wright Patterson AFB, OH 45433-7707, United States - Conference title
- Photoreceptors : materials and devices V (San Jose CA, 26-28 January 2000)
- Conference name
- Photodetectors : materials and devices. Conference (5 ; San Jose CA 2000-01-26)
- Author (monograph)
- Brown, Gail J (Editor); Razeghi, Manijeh (Editor)
- Source
SPIE proceedings series. 2000, pp 227-232 ; ref : 12 ref
- ISBN
- 0-8194-3565-1
- Scientific domain
- Electronics; Optics; Physics; Telecommunications
- Publisher
- SPIE, Bellingham WA
- Publication country
- International
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bande conduction Bande interdite variable Composé III-V Composé binaire Composé quaternaire Diffraction RX Dépôt chimique phase vapeur Dépôt phase vapeur Détecteur infrarouge Etude expérimentale Gallium arséniure Gallium phosphure Indium arséniure Indium phosphure Méthode MOCVD Photodétecteur Photoluminescence Puits quantique Rayon X Spectre absorption As Ga In P GaInAsP In P InP
- Keyword (en)
- Conduction band Variable energy gap III-V compound Binary compound Quaternary compound X ray diffraction Chemical vapor deposition Vapor deposition Infrared detector Experimental study Gallium arsenides Gallium phosphide Indium arsenides Indium phosphide MOCVD Photodetector Photoluminescence Quantum well X ray Absorption spectrum
- Keyword (es)
- Banda conducción Banda prohibida variable Compuesto III-V Compuesto binario Compuesto cuaternario Difracción RX Depósito químico fase vapor Depósito fase vapor Detector rayos infrarrojos Estudio experimental Galio fosfuro Indio fosfuro Fotodetector Fotoluminiscencia Pozo cuántico Rayos X Espectro de absorción
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 778379
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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