Transferred charge in the active layer and EL device characteristics of TFEL cells
- Author
- ONO, Y. A1 ; KAWAKAMI, H; FUYAMA, M; ONISAWA, K
[1] Hitachi ltd., Hitachi Ibaraki 319-12, Japan - Source
Japanese journal of applied physics. 1987, Vol 26, Num 9, pp 1482-1492 ; 1 ; ref : 11 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractérisation Couche mince Cycle hystérésis Densité charge Dispositif électroluminescent Transfert charge électrique Caractéristique charge-tension
- Keyword (en)
- Characterization Thin film Hysteresis loop Charge density Electroluminescent device Electric charge transfer
- Keyword (es)
- Caracterización Capa fina Ciclo histéresis Densidad carga Dispositivo electroluminiscente Transferencia carga eléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7830785
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.26.1482 
https://dx.doi.org/10.1143/JJAP.26.1482
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