Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method
- Author
- LO, C. F1 ; JOHNSON, K. H; ADLER, D
[1] Massachusetts inst. technology, dep. physics, Cambridge MA 02139, United States - Source
Journal of non-crystalline solids. 1988, Vol 99, Num 1, pp 97-103 ; ref : 17 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Densité électron Energie corrélation Etat amorphe Etat localisé Etude théorique Liaison disponible Méthode Xalpha Semiconducteur Structure électronique Méthode Xalpha SW Système hydrogène silicium
- Keyword (en)
- Electron density Correlation energy Amorphous state Localized state Theoretical study Dangling bond Xalpha method Semiconductor materials Electronic structure
- Keyword (es)
- Densidad electrón Energía correlación Estado amorfo Estado localizado Estudio teórico Enlace disponible Método Xalfa Semiconductor(material) Estructura electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7840844
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/0022-3093(88)90461-9 
https://dx.doi.org/10.1016/0022-3093(88)90461-9
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-3093(88)90461-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:2:\"99\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"97\";s:8:\"\u0000*\u0000epage\";s:3:\"103\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"LO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:13:\"JOHNSON, K. H\";i:1;s:8:\"ADLER, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-3093(88)90461-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:2:\"99\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"97\";s:8:\"\u0000*\u0000epage\";s:3:\"103\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"LO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:13:\"JOHNSON, K. H\";i:1;s:8:\"ADLER, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-3093(88)90461-9\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-3093(88)90461-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:2:\"99\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"97\";s:8:\"\u0000*\u0000epage\";s:3:\"103\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"LO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:13:\"JOHNSON, K. H\";i:1;s:8:\"ADLER, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-3093(88)90461-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:2:\"99\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"97\";s:8:\"\u0000*\u0000epage\";s:3:\"103\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"LO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:13:\"JOHNSON, K. H\";i:1;s:8:\"ADLER, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-3093(88)90461-9\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1988\";s:9:\"\u0000*\u0000volume\";s:2:\"99\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"97\";s:8:\"\u0000*\u0000epage\";s:3:\"103\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"LO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:13:\"JOHNSON, K. H\";i:1;s:8:\"ADLER, D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
