Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage
- Author
- SCHERER, A1 ; ROUKES, M. L; CRAIGHEAD, H. G; RUTHEN, R. M; BEEBE, E. D; HARBISON, J. P
[1] Bell Communications Research, Red Bank NJ 07701, United States - Source
Applied physics letters. 1987, Vol 51, Num 25, pp 2133-2135 ; ref : 14 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D17 Other techniques and industries
- Discipline
- Generalities in applied sciences
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7850234
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.98970 
https://dx.doi.org/10.1063/1.98970
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